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| Data Sheet 200 mW EPITAXIAL PLANAR DIODES Mechanical Dimensions .110 .060 Description Pin 2 Pin 1 .037 .115 .037 2 3 1 .016 Pin 3 .043 .004 .016 Features n PLANAR PROCESS n 200 mW POWER DISSIPATION Electrical Characteristics @ 25 O C. Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO Non-Repetitive Peak Forward Surge Current...I FSM Forward Voltage...VF @ IF = 100 mA DC Reverse Current...IR Power Dissipation...PD Typical Junction Capacitance...CJ Reverse Recovery Time...tRR Operating Temperature Range...TJ Storage Temperature Range...TSTRG .01 uF PVV = 100nS 5K Ohms @ VR = 70V n INDUSTRY STANDARD SOT-23 PACKAGE n MEETS UL SPECIFICATION 94V-0 FMBBAV99 FMBBAV99 85 75 Units Volts Volts ............................................. 2 1 5 ............................................... mAmps ............................................. 4.0 ............................................... ............................................. 1.0 ............................................... ............................................. 5 0 ............................................... ............................................. 2 5 0 ............................................... ............................................. 1.5 ............................................... ............................................. 4.0 ............................................... ......................................... -25 to 85 .......................................... ......................................... -65 to 150 .......................................... Amps Volts Amps mW pF nS C C Device Under Test Test Output IF 50 Ohms RG = 50 Ohms Page 10-27 IR Trr 0.1 IR FMBBAV99 |
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